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IIT Roorkee Develops MeRAM, Claims Breakthrough in Memory Device Technology


A team of researchers from IIT Roorkee’s Department of Physics and Centre for Nanotechnology developed a high-density, energy-efficient, and four-logic state memory device called the Magnetoelectric Random Access Memory (MeRAM).

This device has the potential to provide an enormous boost to overall computing processes and memory-intensive tasks such as video and multimedia signal processing, virtual reality, pattern recognition, artificial intelligence, and machine learning.

“MeRAM has immense potential to be used in future memory chips for almost all electronic applications, including smart phones, tablets, computers, microprocessors, and for large data storage,” says Davinder Kaur Walia, who is a professor at the Department of Physics and Centre for Nanotechnology.

She said that the device was built in the Functional Nanomaterials Research Laboratory by using the magnetron sputtering technique.

According to Walia, one of MeRAM’s key advantages over existing technologies is that it is able to combine extraordinary low energy with very high density, high-speed reading and writing times, and non-volatility, which is the ability to retain data when no power is applied.

“The world is rapidly moving towards faster, smaller and quantum technologies which has created an ever-increasing demand for small and more efficient devices and technology. Our focus was to achieve a four-logic state as we knew that then we will be able to create a device which could probably usher in a new technological revolution,” she said.

“To achieve this, we used a new material called Ferromagnetic Shape Memory Alloys (FSMA) and the concept of composite barrier were chosen which helps us in achieving the goal of distinguishable memory logic states. The current ultimate memory cell has shown a tremendous improvement of nearly 140 per cent in the memory functions,” she added.

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